发明名称 |
CENTER STORAGE NODE FOR DRAM TRENCH CAPACITORS |
摘要 |
A trench capacitor cell (100), in accordance with the present invention, includes a trench having an outer electrode (110) formed in a substrate adjacent to the trench. A storage node (108) is formed in the trench and capacitively coupled to the outer electrode. A center node (112) is capacitively coupled to the storage node, and the storage node surrounds the center node within the trench. The center node includes a portion extending from the trench for connecting to a potential (P) to provide charge retention in the storage node during operation.
|
申请公布号 |
WO0126158(A9) |
申请公布日期 |
2002.09.26 |
申请号 |
WO2000US27218 |
申请日期 |
2000.10.02 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP. |
发明人 |
ZIMMERMANN, ULRICH;ACHAMMER, THOMAS |
分类号 |
H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|