发明名称 CENTER STORAGE NODE FOR DRAM TRENCH CAPACITORS
摘要 A trench capacitor cell (100), in accordance with the present invention, includes a trench having an outer electrode (110) formed in a substrate adjacent to the trench. A storage node (108) is formed in the trench and capacitively coupled to the outer electrode. A center node (112) is capacitively coupled to the storage node, and the storage node surrounds the center node within the trench. The center node includes a portion extending from the trench for connecting to a potential (P) to provide charge retention in the storage node during operation.
申请公布号 WO0126158(A9) 申请公布日期 2002.09.26
申请号 WO2000US27218 申请日期 2000.10.02
申请人 INFINEON TECHNOLOGIES NORTH AMERICA CORP. 发明人 ZIMMERMANN, ULRICH;ACHAMMER, THOMAS
分类号 H01L27/108;(IPC1-7):H01L27/108 主分类号 H01L27/108
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