发明名称 |
Circuit configuration for forming a MOS capacitor with a lower voltage dependence and a lower area requirement |
摘要 |
A circuit configuration for providing a capacitance includes short-channel MOS transistors that are reverse-connected in series or in parallel, and that have the same channel type. When the short-channel MOS transistors are operated exclusively in the depletion mode in the required voltage range, the useful capacitance is increased, because of intrinsic capacitances, as compared with circuit configurations having conventional long-channel MOS transistors. These circuits greatly reduce the area taken up and reduce the costs.
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申请公布号 |
US2002135044(A1) |
申请公布日期 |
2002.09.26 |
申请号 |
US20020113421 |
申请日期 |
2002.04.01 |
申请人 |
TILLE THOMAS;SCHMITT-LANDSIEDEL DORIS;SAUERBREY JENS |
发明人 |
TILLE THOMAS;SCHMITT-LANDSIEDEL DORIS;SAUERBREY JENS |
分类号 |
H01L27/08;H01L29/94;(IPC1-7):H01L29/00 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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