| 摘要 |
An improved Schottky device, having a low resistivity layer of semiconductor material, a high resistivity layer of semiconductor material and a buried dopant region positioned in the high resistivity layer utilized to reduce reverse leakage current. The low resistivity layer can be an N+ material while the high resistivity layer can be an N- layer. The buried dopant region can be of P+ material, thus forming a PN junction with an associated charge depletion zone in the N- layer and an associated low reverse leakage current. The location of the P+ material allows for a full Schottky barrier between the N- material and a barrier metal to be maintained, thus the device experiences a low forward voltage drop.
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