| 发明名称 |
Methods of chemical vapor depositing ruthenium by varying chemical vapor deposition parameters |
| 摘要 |
A layer is formed by chemical vapor depositing a seeding layer of ruthenium oxide on a substrate at a chemical vapor deposition flow rate ratio of a ruthenium source to oxygen gas. A main layer of ruthenium is chemical vapor deposited on the seeding layer by increasing the chemical vapor deposition flow rate ratio of the ruthenium source to the oxygen gas.
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| 申请公布号 |
US2002137335(A1) |
申请公布日期 |
2002.09.26 |
| 申请号 |
US20020080000 |
申请日期 |
2002.02.21 |
| 申请人 |
WON SEOK-JUN;YOO CHA-YOUNG;KIM SUNG-TAE;PARK YOUNG-WOOK;LEE YUN-JUNG;PARK SOON-YEON |
发明人 |
WON SEOK-JUN;YOO CHA-YOUNG;KIM SUNG-TAE;PARK YOUNG-WOOK;LEE YUN-JUNG;PARK SOON-YEON |
| 分类号 |
H01L21/205;C23C16/02;C23C16/40;H01L21/02;H01L21/285;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/205 |
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