Method for testing memory cell in semiconductor device

摘要

A method for testing a memory cell of the semiconductor device includes the steps of determining a reference memory cell and setting a first trip point by measuring a first drain current of a reference memory cell, testing an erasure verifying memory cell to be tested at a room temperature, detecting a fourth drain current by measuring the erasure verifying memory cell at a hot temperature and comparing the fourth drain current with the first drain current, varying the first drain trip point according to a current difference between the firs and the fourth drain currents and setting a second trip point of the erasure verifying memory cell according to the varied first trip point.