发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
A semiconductor device comprises a semiconductor body (1) which is provided at a surface (2) with a non-volatile memory cell comprising a source (3) and a drain (4), and an access gate (14) which is electrically insulated from a gate structure (8) comprising a control gate (9), the gate structure (8) being electrically insulated from the semiconductor body (1) by a gate dielectric (11, 25). The gate dielectric (11, 25) is provided with a charge-storage region wherein data in the form of electric charge can be stored. The access gate (14) has a substantially flat surface portion (17) extending substantially parallel to the surface (2) of the semiconductor body (1) and has the shape of a block which is disposed against the gate structure (8) without overlapping the gate structure (8).
|
申请公布号 |
US2002137290(A1) |
申请公布日期 |
2002.09.26 |
申请号 |
US20010980510 |
申请日期 |
2001.11.02 |
申请人 |
WILS NICOLE ANNE HELENA FREDDY;SLOTBOOM MICHIEL;WIDDERSHOVEN FRANCISCUS PETRUS |
发明人 |
WILS NICOLE ANNE HELENA FREDDY;SLOTBOOM MICHIEL;WIDDERSHOVEN FRANCISCUS PETRUS |
分类号 |
H01L21/28;H01L21/336;H01L21/8246;H01L21/8247;H01L27/10;H01L27/115;H01L29/41;H01L29/423;H01L29/49;H01L29/788;H01L29/792;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|