Semiconductor laser device and method for fabricating same

摘要

A semiconductor laser device including an InP-based substrate, and a laser structure overlying said InP-based substrate and configured to form a ridge stripe, said laser structure having a plurality of compound semiconductor layers including at least one selectively-oxidized layer forming a current confinement structure, said selectively-oxidized layer including a pair of Al-oxidized peripheral areas and a non-oxidized central area sandwiched therebetween and forming a current path for said laser structure. The semiconductor laser device has a reduced threshold current and excellent lasing characteristics by the function of the oxidized layer or a current blocking layer.