摘要 |
<p>A processing system for semiconductor, comprising a processing chamber (11) for storing a substrate (W) to be processed. A gas supply system is provided in order to supply a reactive feed gas containing a halogen element into the processing chamber (11). An exhaust system is provided in order to evacuate the processing chamber (11). The exhaust system includes a stainless steel exhaust pipe (30) coupling the processing chamber (11) and an exhaust pump (33). The exhaust pipe (30) has inner surface coated with a lining film (70). The lining film (70) substantially comprises a ternary alloy of nickel, phosphorus and tin or tungsten.</p> |