发明名称 |
SOI semiconductor device capable of preventing floating body effect |
摘要 |
The present invention provides an SOI device preventing the floating body effect, and a method for manufacturing the same. Disclosed is a method comprising the steps of: forming an isolation layer on a first silicon substrate; forming a conductive layer on the isolation layer and the first silicon substrate; forming a buried insulating layer on the conductive layer; bonding the second silicon substrate so as to contact with the buried insulating layer; exposing the isolation layer by removing backside of the first silicon substrate by selected thickness thereby defining a semiconductor layer; forming a transistor by forming a gate electrode, a source region and a drain region at selected portions of the semiconductor layer; etching a selected portion of the isolation layer so as to expose the conductive layer; and forming a body electrode to be contacted with the conductive layer within the isolation layer.
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申请公布号 |
US6455396(B1) |
申请公布日期 |
2002.09.24 |
申请号 |
US20010955028 |
申请日期 |
2001.09.19 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
LEE JONG WOOK |
分类号 |
H01L21/31;H01L29/786;(IPC1-7):H01L21/30;H01L24/46 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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