发明名称 Multilayered body for photolithographic patterning
摘要 Disclosed is a novel multilayered body for photolithographic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising:(A) 100 parts by weight of an alkali-soluble resin;(B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and(C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.
申请公布号 US6455228(B1) 申请公布日期 2002.09.24
申请号 US20000641686 申请日期 2000.08.18
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 TACHIKAWA TOSHIKAZU;KANEKO FUMITAKE;KUBOTA NAOTAKA;MIYAIRI MIWA;HIROSAKI TAKAKO;ENDO KOUTARO
分类号 H01L21/027;G03F7/038;G03F7/09;(IPC1-7):G03F7/004;H01L21/02 主分类号 H01L21/027
代理机构 代理人
主权项
地址