发明名称 |
Method for polysilicon crystalline line width measurement post etch in undoped-poly process |
摘要 |
A method of measuring a width of an undoped or lightly doped polysilicon line is disclosed. The width measuring method includes generating carriers in the polysilicon line with an energy source; measuring a capacitance between the polysilicon line and a substrate separated from the polysilicon line by a dielectric layer; and determining a line width of said polysilicon line from the measured capacitance. The capacitance measurement includes connecting first and second probes to the polysilicon line; connecting a third probe to the substrate; connecting a first terminal of a capacitance meter to the first and second probes; connecting a second terminal of the capacitance meter to the third probe; and applying a direct current bias across the first and second probes. A capacitor may be connected between the first and second probes. Further steps include, connecting a fourth probe to a conductor that supports the substrate; and connecting the fourth probe to the third probe.
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申请公布号 |
US6456082(B2) |
申请公布日期 |
2002.09.24 |
申请号 |
US20010973625 |
申请日期 |
2001.10.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
NOWAK EDWARD J.;LI JAMES C. |
分类号 |
H01L21/66;(IPC1-7):G01R27/14 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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