Internally ballasted silicon germanium transistor

摘要

A bipolar transistor is disclosed. The bipolar transistor comprises: a silicon substrate; a collector formed in the semiconductor substrate, a base formed over the collector, the base having an intrinsic base region and an extrinsic base region, the extrinsic base region forming an internal resistor, an emitter formed over the intrinsic base region; and a dielectric layer formed between the extrinsic base region and the collector, the extrinsic base region. the dielectric layer and the collector forming an internal capacitor. The base of the transistor may be silicon-germanium.