| 发明名称 |
Method of manufacturing a trench gate power transistor with a thick bottom insulator |
| 摘要 |
There are formed a gate insulator 8 and a gate 3 of a power transistor Q having a trench-gate structure. There are then formed a channel region 5 and a source region 6 of the power transistor Q.
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| 申请公布号 |
US6455378(B1) |
申请公布日期 |
2002.09.24 |
| 申请号 |
US20000695036 |
申请日期 |
2000.10.25 |
| 申请人 |
HITACHI, LTD.;HITACHI ULSI SYSTEMS CO., LTD. |
发明人 |
INAGAWA HIROSHI;MACHIDA NOBUO;OISHI KENTARO |
| 分类号 |
H01L21/336;H01L29/417;H01L29/423;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
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