发明名称 |
Short-tolerant resistive cross point array |
摘要 |
A data storage device includes a resistive cross point array of memory cells. Each memory cell includes a memory element and a resistive element connected in series with the memory element. The resistive elements substantially attenuate any sneak path currents flowing through shorted memory elements during read operations. The data storage device may be a Magnetic Random Access Memory ("MRAM") device.
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申请公布号 |
US6456525(B1) |
申请公布日期 |
2002.09.24 |
申请号 |
US20000663752 |
申请日期 |
2000.09.15 |
申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
PERNER FREDERICK A.;ANTHONY THOMAS C. |
分类号 |
G11C11/14;G11C11/15;G11C11/16;G11C16/02;H01L21/8246;H01L27/10;H01L27/105;H01L27/22;H01L27/28;H01L43/08;H01L51/05;(IPC1-7):G11C11/14 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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