| 摘要 |
A multilayer resist structure is irradiated more than one time with ultraviolet rays through a photomask. Each time the structure is irradiated, ultraviolet rays of a little greater quantity of light than those used in the last irradiation are used. Also, with each exposure, a photomask which has a larger lightproof section than that used in the last irradiation is used. Next, the multilayer resist structure is developed, and the exposed area of each photoresist is removed with a developing solution. Also, in amorphous silicon layers, the areas under the removed photoresist are easily removed with the developing solution. A resist structure having desired steps is thus completed. Using the resist structure, a three-dimensional microstructure can be formed.
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