Semiconductor memory device having memory cells each having a conductive body of booster plate and a method for manufacturing the same

摘要

A booster plate is insulatively formed on a silicon semiconductor substrate with a first gate insulation film disposed therebetween. A floating gate which forms a capacitor in cooperation with part of at least the upper surface of the booster plate is insulatively formed on the booster plate with a second insulating film disposed therebetween. Further, a control gate is insulatively formed on the floating gate with a thrid insulating film disposed therebetween.