发明名称 |
Monolithic microelectronic array structure having substrate islands and its fabrication |
摘要 |
A monolithic microelectronic array structure includes a microelectronic integrated circuit array having a first plurality of microelectronic integrated circuit elements each deposited on a front side of a substrate. The substrates are physically discontinuous so that each substrate comprises a substrate island which is physically separated from the other substrate islands. The monolithic microelectronic array structure optionally includes a first plurality of input/output elements with a respective input/output element associated with and directly connected to each of the microelectronic integrated circuit elements, and a second plurality of electrically conductive interconnects extending between the microelectronic integrated circuit elements of adjacent substrate islands. The monolithic microelectronic array structure may be planar, or it may be curved.
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申请公布号 |
US6455931(B1) |
申请公布日期 |
2002.09.24 |
申请号 |
US20010859618 |
申请日期 |
2001.05.15 |
申请人 |
RAYTHEON COMPANY |
发明人 |
HAMILTON, JR. WILLIAM J.;RAY MICHAEL;GORDON ELI E.;FLETCHER CHRISTOPHER L.;BERRY RONALD W. |
分类号 |
H01L23/34;H01L27/146;(IPC1-7):H01L23/34 |
主分类号 |
H01L23/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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