发明名称 Monolithic microelectronic array structure having substrate islands and its fabrication
摘要 A monolithic microelectronic array structure includes a microelectronic integrated circuit array having a first plurality of microelectronic integrated circuit elements each deposited on a front side of a substrate. The substrates are physically discontinuous so that each substrate comprises a substrate island which is physically separated from the other substrate islands. The monolithic microelectronic array structure optionally includes a first plurality of input/output elements with a respective input/output element associated with and directly connected to each of the microelectronic integrated circuit elements, and a second plurality of electrically conductive interconnects extending between the microelectronic integrated circuit elements of adjacent substrate islands. The monolithic microelectronic array structure may be planar, or it may be curved.
申请公布号 US6455931(B1) 申请公布日期 2002.09.24
申请号 US20010859618 申请日期 2001.05.15
申请人 RAYTHEON COMPANY 发明人 HAMILTON, JR. WILLIAM J.;RAY MICHAEL;GORDON ELI E.;FLETCHER CHRISTOPHER L.;BERRY RONALD W.
分类号 H01L23/34;H01L27/146;(IPC1-7):H01L23/34 主分类号 H01L23/34
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