| 摘要 |
The extending direction of a gate electrode configured by protruding a portion of a gate signal line is tilted with respect to the extending direction of the gate signal line. To form the active layer of a switching TFT, a focused laser is irradiated on an a-Si film to form a p-Si film. During this process, the long-axis direction of the laser is oriented either orthogonally or in parallel with respect to the extending direction of the gate signal line. Accordingly, by tilting the extending direction of the gate electrode with respect to the extending direction of the gate signal line, a junction portion between a channel and a source/drain is prevented from entirely overlapping a periphery portion of the laser along its long-axis direction. This arrangement prevents generation of leak current in the switching TFT, realizing a stable EL display device.
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