Using implantation method to control gate oxide thickness on dual oxide semiconductor devices

摘要

A method for forming dual thickness gate oxide layers comprising the following steps. A structure having at least a first area and a second area is provided. The second area of the structure is masked. Ion implanting Si4+ or Ge4+ ions into the unmasked first area of the structure to form an amorphous layer within the first area of the structure. The second area of the structure is unmasked. The first and second areas of the structure are oxidized to form: a first gate oxide layer upon the structure within the first area; and a second gate oxide layer upon the structure within the second area. The first gate oxide layer having a greater thickness than the second gate oxide layer, completing formation of the dual thickness gate oxide layers.