Method of reducing stop layer loss in a photoresist stripping process using a fluorine scavenger

摘要

A method of stripping a photoresist layer in a plasma derived from an etch gas for the photoresist and a fluorine-containing polymer includes a scavenging gas for fluorine in the resist strip etch plasma. The scavenger for flourine reduces the amount of fluorine released from a fluorine-containing polymer into the resist etch plasma during polymer dissociation in the photoresist stripping step, thereby providing a photoresist stripping mechanism with reduced stop layer loss.