Semiconductor device, method of manufacturing the same and method of arranging dummy region

摘要

Provided are a semiconductor device capable of satisfactorily solving a floating-body problem and a hot carrier problem which often arise in an SOI device and of causing a widely distributed partial isolating film to generate a crystal defect for peripheral structures with difficulty and a method of manufacturing the semiconductor device. A dummy region DM1 having no function as an element is formed at almost regular intervals in a partial isolating film 5b provided between MOS transistors TR1. Consequently, the occupation rate of the dummy region DM1 having a lower resistance value than that of a silicon layer 3b provided under the partial isolating film 5b is increased so that the floating-body problem and the hot carrier problem can be solved.