| 发明名称 |
Semiconductor fabrication with multiple low dose implant |
| 摘要 |
A method of reducing implant dose loss is provided. The method includes performing multiple low dose implant steps with interspersed anneal steps, thereby avoiding amorphous-silicon formation. The anneal steps may be performed at high temperatures or at low temperatures.
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| 申请公布号 |
US6455385(B1) |
申请公布日期 |
2002.09.24 |
| 申请号 |
US19980003751 |
申请日期 |
1998.01.07 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
ALVIS ROGER L.;ISHIDA EMI |
| 分类号 |
H01L21/265;H01L21/324;H01L29/78;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
| 代理机构 |
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代理人 |
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