发明名称 PHOSPHOROUS COPPER ANODE FOR ELECTROPLATING
摘要 PURPOSE: To provide a phosphorous copper anode for electroplating which does not deposit and form particles on the plating surface of a cathode, more preferably the phosphorous copper anode for electroplating for forming copper wiring of semiconductor devices by electroplating. CONSTITUTION: This phosphorous copper anode for electroplating has a composition containing 20 to 800 ppm phosphorus and 0.1 to <2 ppm oxygen and balance high-purity copper of >=99.9999 purity and has a structure having the average grain size of recrystallation within a range of 10 to 50 μm.
申请公布号 KR20020073289(A) 申请公布日期 2002.09.23
申请号 KR20020013454 申请日期 2002.03.13
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 IKENOYA HIDEYUKI;KAKIMOTO AKIHIRO;YAJIMA KENJI
分类号 C22C9/00;C25D17/10;(IPC1-7):C25D17/10 主分类号 C22C9/00
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