发明名称 |
PHOSPHOROUS COPPER ANODE FOR ELECTROPLATING |
摘要 |
PURPOSE: To provide a phosphorous copper anode for electroplating which does not deposit and form particles on the plating surface of a cathode, more preferably the phosphorous copper anode for electroplating for forming copper wiring of semiconductor devices by electroplating. CONSTITUTION: This phosphorous copper anode for electroplating has a composition containing 20 to 800 ppm phosphorus and 0.1 to <2 ppm oxygen and balance high-purity copper of >=99.9999 purity and has a structure having the average grain size of recrystallation within a range of 10 to 50 μm.
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申请公布号 |
KR20020073289(A) |
申请公布日期 |
2002.09.23 |
申请号 |
KR20020013454 |
申请日期 |
2002.03.13 |
申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
IKENOYA HIDEYUKI;KAKIMOTO AKIHIRO;YAJIMA KENJI |
分类号 |
C22C9/00;C25D17/10;(IPC1-7):C25D17/10 |
主分类号 |
C22C9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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