METHOD AND APPARATUS FOR PROCESSING, PROCESSING SYSTEM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To accurately obtain a desired film thickness distribution of a surface side to be processed of a work piece. SOLUTION: A forming unit 4 obtains a target polishing amount distribution based on a film thickness of a wafer 2 measured by a measuring unit 3. The forming unit 4 assumes a control program for controlling a polishing unit 1, and predicts the polishing amount distribution obtained after the wafer 2 is polished by the unit 1 according to the assumed control program. Then, the forming unit 4 predicts the polishing amount of the partial region of the surface to be polished of the wafer 2 according to a relation in which a gradually increasing amount of the polishing amount is reduced while gradually increasing the polishing amount, as a contact phase relative speed between the partial region of the surface to be polished of the wafer 2 and a polishing unit 14 is accelerated. The forming unit 4 compares the predicted polishing amount distribution with the target polishing amount distribution and decides good or not of the assumed control program. The polishing unit 1 polishes the wafer 2 according to the control program decided to be good.