发明名称 DEVICE AND METHOD FOR PLASMA DEPOSITION
摘要 PROBLEM TO BE SOLVED: To provide plasma film forming device/method for forming a film on the substrate of a large area with low power consumption. SOLUTION: The plasma film forming device is provided with electrodes 2 exposed to the inner part of a vacuum container 5. The electrodes 2 are constituted of every other first electrodes and every other second electrodes which are prevented from directly being brought into contact with the first electrodes. The device is provided with dielectrics 9 exposed to the inner part of the vacuum container 5 so that they are brought into contact with the electrodes 2. The dielectrics 9 include first dielectric parts which are brought into contact with the first electrodes, and second dielectric parts which are brought into contact with the second electrodes. The device is provided with a first power source 1 as a voltage application means for applying voltage between the first and the second electrodes and a potential reverse means for repetitively reversing the level relation of potential between the first and the second electrodes.
申请公布号 JP2002270522(A) 申请公布日期 2002.09.20
申请号 JP20010068642 申请日期 2001.03.12
申请人 SHARP CORP 发明人 SAKAI OSAMU;OKAMOTO MASAYA
分类号 H05H1/46;B01J19/08;C23C16/503;H01L21/205 主分类号 H05H1/46
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