| 摘要 |
PROBLEM TO BE SOLVED: To provide the peripheral structure of a power component resisting a high voltage. SOLUTION: A power component formed in an N-type silicon substrate, the lower and upper surfaces of which respectively include a first and a second P-type region, that does not extend to the component periphery, the high voltage being capable of existing between the first and second regions and having to withstand the junctions between the first and second regions and the substrate. A deep insulating region 31 that does not join the first region 3 is provided at the lower periphery of the component. The lower surface of the substrate between the deep insulating region and the first region is coated with an insulating-layer. The height of the deep insulating region is greater than the upward extension of soldering 22, formed during the soldering of the lower surface on a heat sink. |
