| 摘要 |
PROBLEM TO BE SOLVED: To control a thickness of an SiC layer by enabling a detection of a flattened position of the SiC layer when the SiC layer is flattened. SOLUTION: A method for manufacturing a silicon carbide semiconductor device comprises the steps of forming a trench 2 for forming an impurity layer on an SiC substrate, and forming a sufficiently shallow marker 3 as compared with the trench 2. Then, a depth difference between the trench 2 and the marker 3 are matched with a thickness necessary as the impurity layer. The method further comprises the steps of epitaxially growing the SiC layer 4 so as to embed the trench 2 and the marker 3, then sequentially removing the SiC layer from its surface layer, and advancing flattening until the surface of the substrate 1 is exposed. Since the substrate 1 and the layer 4 are then both transparent or translucent, a profile of the marker 3 can be always observed from a time point of starting the flattening. When the planarization is advanced and the marker 3 is vanished, its vanishment can be confirmed, and hence flattening is stopped at the confirming time point.
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