| 摘要 |
PROBLEM TO BE SOLVED: To provide appropriate polishing characteristics without lowering productivity, in a planarization process by a CMP method. SOLUTION: There are provided a process in which an insulation film 110 is formed over the entire surface of a semiconductor substrate 100 comprising an effective element region 102, in which an element component is formed and a peripheral region 106 in which no element component is formed, a process in which a resist mask 112 is formed on the insulation film 110 of the peripheral region 106 located within a prescribed distance from the effective element region 102 and the effective element region 102, a process of removing the insulation film 110 exposed in the peripheral region 106 by a prescribed amount through etching, a process to remove the resist mask 112, and a process of planarizing the insulating film 110 by CMP method.
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