发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which efficiently crystallizes a semiconductor film by a short time heat treatment and getters a catalyst element used for the crystallization, without deforming a substrate in a semiconductor device manufacturing process using a low heat- resistive substrate such as glass. SOLUTION: The heat treatment comprises a step for controlling an optical source in a pulse manner to irradiate a semiconductor film therewith, thus efficiently heat treating the semiconductor film for a short time. This prevents the heat damage caused to a substrate.</p>
申请公布号 JP2002270508(A) 申请公布日期 2002.09.20
申请号 JP20010365447 申请日期 2001.11.30
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TAKANO YOSHIE;ORIKI KOJI;YAMAZAKI SHUNPEI
分类号 G02F1/1368;H01L21/20;H01L21/26;H01L21/322;H01L21/336;H01L29/786;(IPC1-7):H01L21/20;G02F1/136 主分类号 G02F1/1368
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