发明名称 |
MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which efficiently crystallizes a semiconductor film by a short time heat treatment and getters a catalyst element used for the crystallization, without deforming a substrate in a semiconductor device manufacturing process using a low heat- resistive substrate such as glass. SOLUTION: The heat treatment comprises a step for controlling an optical source in a pulse manner to irradiate a semiconductor film therewith, thus efficiently heat treating the semiconductor film for a short time. This prevents the heat damage caused to a substrate.</p> |
申请公布号 |
JP2002270508(A) |
申请公布日期 |
2002.09.20 |
申请号 |
JP20010365447 |
申请日期 |
2001.11.30 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
TAKANO YOSHIE;ORIKI KOJI;YAMAZAKI SHUNPEI |
分类号 |
G02F1/1368;H01L21/20;H01L21/26;H01L21/322;H01L21/336;H01L29/786;(IPC1-7):H01L21/20;G02F1/136 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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