发明名称 PLASMA PROCESSING APPARATUS AND PLASMA TREATING METHOD
摘要 PROBLEM TO BE SOLVED: To solve a problem that a plasma processing apparatus is required to attain a more accurate process state stably in correspondence with a silicon wafer of a larger diameter and fine patterning of a semiconductor device, and although it is important to know the plasma state under actual treatment, especially in the vicinity of an article being treated, it is difficult for a process monitor built in the apparatus to attain the information of plasma state in the vicinity of the article being treated, and to provide a plasma processing system in which the data of plasma at the position of the article being treated can be attained easily in developing the apparatus or the plasma process or during operating the apparatus. SOLUTION: A wafer stage for holding the article being treated is provided with a data communication terminal 14 and a sensor 11 for sensing the plasma state is installed or carried on the wafer stage 13 in order to take out a signal through the data communication terminal thus attaining data concerning to plasma.
申请公布号 JP2002270580(A) 申请公布日期 2002.09.20
申请号 JP20010063608 申请日期 2001.03.07
申请人 HITACHI LTD 发明人 IKENAGA KAZUYUKI;EDAMURA MANABU;YAMAMOTO HIDEYUKI;FUJII TAKASHI;MAKINO AKITAKA
分类号 H05H1/46;B01J19/00;B01J19/08;C23C16/52;H01L21/205;H01L21/302;H01L21/3065 主分类号 H05H1/46
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