| 摘要 |
PROBLEM TO BE SOLVED: To improve a light-emitting intensity of the blue color of light-emitting diode of a GaN compound semiconductor, and to stabilize the drive voltage. SOLUTION: A gallium nitride compound semiconductor light-emitting element comprises a sapphire substrate, buffer layer formed on the sapphire substrate, a high carrier concentration layer containing an n-type GaN set to a prescribed value of the range of an electron concentration doped with a silicon(Si) of 1×10<17> to 1×10<19> /cm<3> , a low carrier concentration layer containing an n-type GaN of electron concentration in the range of 1×10<14> to 1×10<17> /cm<3> and formed on the high carrier concentration layer, and a p-type layer containing a p-type AlXGa1- XN (including X=0) doped with magnesium. |
