METHOD FOR FORMING CRYSTALLINE SILICON THIN FILM BY PLASMA CVD

摘要

PROBLEM TO BE SOLVED: To inexpensively and speedily form a crystalline silicon thin film with a large area and uniform film thickness by plasma CVD by using an inexpensive substrate having a low heat resistant temperature. SOLUTION: The crystalline silicon thin film is formed by plasma CVD by using a plurality of reaction chambers having parallel plane-type high frequency electrodes including substrate support electrodes for supporting the substrate and opposite electrodes facing the substrate. The parallel plane electrodes have the electrode faces of not less than 0.36 m<2> in face to face with each other. Raw material gas introduced into the reaction chamber includes silane and hydrogen having the flow rate ratio of not less than 50 times as much as silane. The inner part of the reaction chamber is adjusted to the pressure of not less than 667 Pa, and an interval between the substrate and the opposite electrode is set to be not more than 10 mm. The reaction chambers having the parallelism of the parallel plane-type electrode for canceling the non-uniformity of thickness depending on the local place of the crystalline silicon thin film deposited in the respective reaction chambers are combined and used as a plurality of the reaction chambers.