| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a configuration, capable of sufficiently uniformizing an in-plane temperature of a substrate, related to an electrostatic attraction mechanism to electrostatically attract the substrate for processing. SOLUTION: The electrostatic attraction mechanism for processing a substrate, which holds a substrate 9 by electrostatic attraction in a processing chamber 1, comprises an electrostatic attraction stage 2 comprising a temperature control means and an attraction power source 23. The electrostatic attraction stage 2 comprises a plurality of projections 25, making contact with the rear surface of the substrate 9 and a gas guide path 20 which guides a heat-exchange gas into a recessed part 24 formed with the projections 25. Related to the surfaces of the projections 25 which make contact with the substrate 9, a width R, when viewed to be shortest, is equal to twice a thickness t of the substrate 9 or less, while the spaces between projections 25 are set to 3 mm or less. The electrostatic attraction stage 2 comprises a peripheral protruding part 27, extending along the periphery, enabling the inside of recessed part 24 to be a closed space by the peripheral protruding part 27 and the substrate 9. The width of the peripheral protruding part 27 is 2 mm or less, which is equivalent to twice the thickness of substrate 9 or less.</p> |
