| 摘要 |
PROBLEM TO BE SOLVED: To eliminate a failure like dissolution or flaking of a conductive wiring layer, improve a process yield greatly and enhance reliability in insulation between circuits in a manufacturing method, in which a conductive wiring layer is formed on a conductive frame in an electrolytic plating method and a frame is removed after the mounting and sealing of the semiconductor element. SOLUTION: The manufacturing method of a semiconductor device includes a step of forming a plating resist layer on a conductive frame, a step of forming an opening part for forming a conductive wiring in the plating resist layer, a step of forming a conductive wiring layer while the conductive frame is used as an electrolytic plating lead in the electrolytic plating method, a step of forming a pad to be connected to the semiconductor element in the same electrolytic plating step, a step of flaking and removing the plating resist, a step of sealing the semiconductor element and the conductive wiring layer with resin, and a step of flaking the conductive lead frame. |
