| 摘要 |
PROBLEM TO BE SOLVED: To establish a stable manufacturing method of a mask ROM. SOLUTION: The mask ROM includes a gate electrode 8 formed via a gate insulating film 5 on a semiconductor substrate 1, a source/drain region formed in an adjoined state to the gate electrode 8, and an Al wiring 15 via an interlayer insulting film 14 that covers the gate electrode 8. Impurity ions are implanted in the surface layer of the substrate with masks of the Al wiring 15. A protective film 17 is formed on the Al wiring, and an etching step for the interlayer insulating film 14 is so carried out that the Al wiring 15 is not exposed during the etching. |
