METHOD FOR FABRICATING INSULATED GATE FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a novel method for fabricating an insulated gate field effect transistor in which the problem of gate resistance of an insulated gate field effect transistor is solved. SOLUTION: In the method for fabricating an insulated gate field effect transistor where a channel region, a source region 6, a body contact region 7, an offset region and a drain region 9 are formed on a semiconductor substrate, dosage at the time of ion implantation for forming the body contact region 7 is set less than the dosage at the time of ion implantation for forming the source region 6 and the drain region 9.