| 摘要 |
PROBLEM TO BE SOLVED: To suppress the expansion of dislocation occurred in the activation heat treatment of a heavily-doped region by reducing stress generated at the periphery of a pattern edge part, without performing activation heat treatment for long time at a high temperature. SOLUTION: In the formation of the source/drain region of an MOS transistor having LDD structure, a gate electrode 103 is formed on a P-type silicon substrate 101 via a gate insulating film 102 and ions are injected with the gate electrode 103 as an ion injection mask. Then, an n- low concentration impurity region 106 is formed through heat treatment. A gate electrode side wall 104 adjacent to the gate electrode is formed. Then, n+ heavily-doped region 107 is formed by ion injection with the gate electrode sidewall 104 as the ion injection mask. A source/drain region 108 is formed. A second gate electrode sidewall 105 is formed adjacent to the first gate electrode sidewall 104. Then, the source/ drain region 108 is activated and heat-treated.
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