| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which high-speed operation of a field effect transistor formed by using an n type GaN substrate is realized by reduction of parasitic capacitance. SOLUTION: An i-type GaN layer 2 and an n-type GaN layer 3 are grown epitaxially on the surface of the n-type GaN substrate 1, and the field effect transistor where the n-type GaN layer 3 is set to be an active layer is formed. Terminal pads 7, connected to source, drain and gate electrodes, are arranged outside the area of the field effect transistor. Holes 11 are made in the positions of the terminal pads 7, connected to the gate and drain electrodes of the n-type GaN substrate 1, with the depth reaching the i-type GaN layer 2 from the back.
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