METHOD AND APPARATUS FOR LASER ANNEALING, MASK, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To enhance productivity by increasing throughput while keeping necessary image-forming capability. SOLUTION: An object (a-Si film) 6 to be processed is irradiated with an excimer laser beam through a reticle 21 in which a plurality of repeatedly- patterned chevron-shaped openings 21-1-21-N are formed. To polycrystallize inside of each laser-irradiated region of the object (a-Si film) 6 to be processed, the excimer laser beam is divided to shrink to form a plurality of laser beams, which are respectively directed to the patterned openings 21-1-21-N of the reticle 21. The laser beams, which respectively pass through the patterned openings 21-1-21-N, form images on the object (a-Si film) 6 to be processed.