发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a small-sized semiconductor device of large capacity wherein quantity of heat generated in a power semiconductor element can be dissipated sufficiently while ensuring superior profitability. SOLUTION: This semiconductor device is provided with a semiconductor element 21 having a bottom surface electrode and an upper surface electrode, a metal block 26 positioned on a bottom surface side of the semiconductor element, an element fixing layer 23 which is arranged between the bottom surface electrode and the metal block so as to be in contact with them and has conductivity, a bottom surface electrode side lead 30 which is electrically continuous with the bottom surface electrode, an upper surface electrode side lead 29 which is electrically continuous with the upper surface electrode, and sealing resin 24.
申请公布号 JP2002270736(A) 申请公布日期 2002.09.20
申请号 JP20010072414 申请日期 2001.03.14
申请人 MITSUBISHI ELECTRIC CORP 发明人 KIMURA SUSUMU;MURAKAMI KOHEI;FUJINO JUNJI;HAYASHI KENICHI
分类号 H01L23/29;H01L23/48;H01L25/07;H01L25/18;(IPC1-7):H01L23/29 主分类号 H01L23/29
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