| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a resist pattern that can reduce the number of remaining foreign matters and to provide a method of manufacturing a semiconductor device using the method. SOLUTION: The method includes a first step of forming a resist film 12 on a main surface 11a of a semiconductor substrate 11, a second process of irradiating light or electron beam to the resist film 12 via a mask 13, a third process of bringing the resist film 12 into contact with a first liquid 14 to develop the resist film 12, a fourth process of removing the first liquid 14 on the main surface 11a, and a fifth process of putting the main surface 11a into contact a second liquid 16. |
