| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical semiconductor element that is suppressed in sensitivity drop and improved in a photocurrent/dark current ratio, and to provide a method for manufacturing the element. SOLUTION: In this optical semiconductor element, an electrode layer (a), a photoconductive layer (b) composed of a vapor-deposited film of a molecular photoconductive material, an insulating layer (c) composed of a self-organized film, and another electrode layer (d) are laminated upon another in this order. The dark current of this semiconductor element is adjusted to <=1/2 of that of an optical semiconductor element which is composed only of the electrode layer (a), photoconductive layer (b), and electrode layer (d) and does not have the insulating layer (c). |
