| 摘要 |
PROBLEM TO BE SOLVED: To improve the electrical characteristics of a semiconductor device. SOLUTION: A semiconductor device is constituted in such a way that a natural oxide film formed on the surface of a semiconductor wafer 11 is removed inside a film removal chamber 10f in an ion implantation device 1. After that, the wafer 11 is carried inside an impurity introducing chamber 10a in the device 1 without exposing the wafer 11 to an oxidizing atmosphere, and prescribed impurities are introduces in the wafer 11. |
