| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element the output signal voltage of which is high and less fluctuates and which is suitable for a large-capacity recorder and a magnetic reproducing device. SOLUTION: The high output signal voltage is obtained by making the fluctuation of an MR ratio smaller in the surface of a wafer by constituting ferromagnetic layers 1, 3, and 5 so that the ratio of the magnetic element of the layers 1, 3, and 5 is different, or element contents of barrier layers 2 and 4 may are different from each other in a ferromagnetic double-layered tunnel junction.</p> |
