| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an integrated photovoltaic apparatus that is capable of machining under wide range of leaser irradiation conditions. SOLUTION: In the integrated photovoltaic device, a transparent electrode 2, a semiconductor layer 3 and a rear surface electrode layer 4 that become a photoactive layer are formed on a light transmission substrate in this order. In the integrated photovoltaic device, a transparent conductive film 41 and a metal film 42 are laminated on the rear surface electrode layer 4 from a side close to the semiconductor layer 3, and at least one element selected from silicon(Si) or sodium (Na) is doped into the transparent conductive film 41.</p> |
