| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device having excellent reflecting characteristics by optimizing an antireflection film. SOLUTION: The semiconductor device comprises the antireflection film. The antireflection film has a first silicon nitride film 3a formed on an n-type diffused layer 2, and a second silicon nitride film 3b having a smaller refractive index than that of the first film 3a and formed on the film 3a.</p> |
