| 摘要 |
PROBLEM TO BE SOLVED: To obtain a silicon carbide(SiC) field effect transistor in which the influence of stacking fault upon a device is avoided. SOLUTION: The field effect transistor is formed on an SiC single-crystal substrate. A gate electrode of the transistor is arranged in the clockwise direction or the counterclockwise direction of at least 45 deg. and at most 135 deg., with respect to the direction of the stacking fault existing in the substrate.
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