| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric capacitor which uses a strained ferroelectric film and which displays stable retention characteristic. SOLUTION: The ferroelectric capacitor is obtained, in such a way that a lower electrode 12 composed of a conductive oxide, the ferroelectric film 13 composed of a perovskite oxide and an upper electrode 14 composed of a conductive oxide are epitaxially grown sequentially on a single-crystal substrate 11. The upper electrode 14 and the ferroelectric film 13 are worked in batch, by anisotropic dry etching operation using one mask. The film thickness t of the ferroelectric film 13 is set in the range of 0.25 Su<=t<2> <=1.2 Su with respect to the contact area Su of the ferroelectric film 13 with the upper electrode 14. The ratio Su/Sb of the contact area Su of the ferroelectric film 13 with the upper electrode 14 to the contact area Sb of the ferroelectric film 13 with the lower electrode 12 is set at 1>Su/Sb>=0.25.
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