| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN-based FET with low on resistance, a easily realized pinch off state, and large current switching operation is enabled at a high temperature. SOLUTION: In the GaN-based FET, a lower part gate electrode 2A composed of the same material as a gate electrode 2B to be formed, is formed directly on a semiinsulating substrate 1, with the same pattern as the gate electrode 2B, at least one active layer composed of GaN-based compound semiconductor being formed by embedding the electrode 2A, a gate electrode 2B is formed on the active layer 3, and the gate electrode 2A, 2B are arranged in the vertical direction, sandwiching the active layer 3.
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