发明名称 |
MANUFACTURING METHOD OF THIN-FILM TRANSISTOR, ACTIVATION OF IMPURITY AND THIN-FILM TRANSISTOR |
摘要 |
PROBLEM TO BE SOLVED: To protect an organic polymer substrate from damages even if a semiconductor laser is irradiated with a laser beam, in order to activate impurity-doped into a semiconductor layer. SOLUTION: An impurity is doped into the semiconductor layer 3 formed on the organic polymer substrate 1, and the impurity of the semiconductor layer 3 is activated by irradiating the semiconductor layer 2 with an energy beam, such as from Ar ion laser or copper vapor laser, of which energy absorption at the organic polymer substrate 1 is low such as not to give damages to such an organic polymer substrate 1.
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申请公布号 |
JP2002270843(A) |
申请公布日期 |
2002.09.20 |
申请号 |
JP20010062613 |
申请日期 |
2001.03.06 |
申请人 |
SONY CORP |
发明人 |
GOSAIN DHARAM PAL;MACHIDA AKIO;USUI SETSUO;SATO JUNICHI |
分类号 |
H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L29/786 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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